个人简介

姓     名：廖杨芳

职称/职务：副教授

（中国）官方网站/部门：物理与电子科学（中国）官方网站/物理系 

邮    箱：723530283@qq.com

 

主要学习经历

博士：贵州大学

硕士：华南师范大学

本科：衡阳师范（中国）官方网站

 

主要工作经历

2010.9-现在 华体

 

主要研究方向

1、半导体的光电性质研究

2、半导体的谷-自旋性质研究

3、光催化水解

 

主要教学成果

1、 主教课程：电磁学、固体物理

2、 指导学生情况：

 

主要获奖

 

 

主要科研成果

1、学术论文(*表示通讯作者)

[1]  Fulong Hu, Xuebing Peng, Jing Xie, Yangfang Liao*. Influence of vertical strain on the photoelectronic properties of the ReSe₂/MoSe₂ van der Waals heterostructure [J]. Appl. Surf. Sci., 2022, 572: 151465 (10pp).

[2]  Yangfang Liao, Jing Xie, Bing Lv, Qingquan Xiao, Quan Xie. Determination of the interface band alignment of Mg₂Si/4H-SiC heterojuction for potential photodetector application[J]. Surf. Interface Anal. 2022, 54(3): 270-276. 

[3]  Yangfang Liao,* Xuejun Long, Jing Xie, Bing Lv, Qingquan Xiao, and Quan Xie . Magnetic Properties of 3d Transition Metal Atoms (V, Cr, Mn, Fe, Co, or Ni)-Doped Mg2Si [J]. Phys. Status Solidi B 2022, 259(8): 2100538 (10pp).

[4]  Feiyu Xiang, Yangfang Liao*. Electronic structures and optical properties of uniform ordered hexagonal Ge0.5Si0.5 alloys from first principles [J]. Chemical Physics Letter, 2022,809：140178(5pages).

[5]  Yangfang Liao, Jing Xie, Bing Lv, Qingquan Xiao, Quan Xie. X-ray photoelectron spectroscopy characterization of band offsets of MgO/Mg₂Si and SiO₂/Mg₂Si heterojunctions [J]. Surf. Interface Anal. 2021, 53(10): 852-859.

[6]  Yangfang Liao, Jing Xie, Bing Lv, Dongni Wu, Qingquan Xiao, and Quan Xie. The degradation mechanism of Mg₂Si during exploitation at high temperature [J]. Phys. Status Solidi B, 2021, 258(11): 2100425 (7pp).

[7]  Yangfang Liao, Menghui Fan, Quan Xie, Qingquan Xiao, Jing Xie, Hong Yu,

Shanlan Wang, Xinyu Ma. Defect-induced room-temperature visible light luminescence in Mg₂Si:Al films[J]. Applied Surface Science, 2018,458:360-368.（SCI）

[8]  Yang-Fang Liao, Quan Xie, Qing-Quan Xiao, Qian Chen, Meng-Hui Fan,

Jing Xie, Jin Huang, Jin-Min Zhang, Rui Ma, Shan-Lan Wang, Hong-Xian Wu,

Di Fang. Photoluminescence of Mg₂Si films fabricated by magnetron sputtering [J]. Applied Surface Science, 2017, 403:302-307.（SCI）

 

主要科研项目

[1] 贵州省科学技术基金项目，Mg₂Si基稀磁半导体的电子结构和磁性研究，2019-2022.